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ASTM E2245-11e1
Standard Test Method for Residual Strain Measurements of Thin, Reflecting Films Using an Optical Interferometer
25 стр.
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Разработчик:
Зарубежные/ASTM
ICS:
37.040.20 Photographic paper, films and plates. Cartridges / Фотографическая бумага, пленки и картриджи
Сборник (ASTM):
03.01 Metals -- Mechanical Testing; Elevated and Low-Temperature Tests; Metallography / Металлы - Механические испытания, Испытания при высоких и низких температурах, Металлография
Тематика:
Fatigue & Fracture
Описание
Значение и использование

5.1 Residual strain measurements are an aid in the design and fabrication of MEMS devices. The value for residual strain can be used in Young's modulus calculations.

Область применения

1.1 This test method covers a procedure for measuring the compressive residual strain in thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an optical interferometer, also called an interferometric microscope. Measurements from fixed-fixed beams that are touching the underlying layer are not accepted.

1.2 This test method uses a non-contact optical interferometric microscope with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Ключевые слова:
cantilevers; combined standard uncertainty; fixed-fixed beams; interferometry; length measurements; microelectromechanical systems; MEMS; polysilicon; residual strain; round robin; stiction; strain gradient; test structure