This practice describes a simple and approximate method for determining the current density distribution of ion beams. Formerly under the jurisdiction of Committee E42 on Surface Analysis, this practice was withdrawn in November 2012 and replaced by Guide E1577 on Reporting of Ion Beam Parameters Used in Surface Analysis.

Sputter depth profiling is used in conjunction with Auger electron spectroscopy, x-ray photoelectron spectroscopy, ion scattering spectroscopy, and secondary ion mass spectrometry to determine the chemical composition and atomic concentration as a function of distance from the surface of a specimen. See Guide E 1127.

The diameter of the ion beam used for sputtering must be specified and this practice is a relatively quick method of measuring the shape (that is, current density distribution) of the ion beam if a suitable Faraday cup is not available.³

1.1 This practice describes a simple and approximate method for determining the shape and current density of ion beams. The practice is limited to ion beams of diameter greater than 0.5 mm of the type used for sputtering of solid surfaces to obtain sputter depth profiles. It is assumed that the ion-beam current density is symmetrical about the beam axis.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.