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ASTM F3192-16
Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization (Withdrawn 2023)
5 стр.
Отменен
Электронный (pdf)Печатное издание
117.00 $ (включая НДС 20%)
Разработчик:
Зарубежные/ASTM
ICS:
25.220.40 Metallic. Including electrolytic depositions, cathodic coatings, autocatalytic coatings, etc. / Металлические покрытия. Включая электролитическое осаждение, катодные покрытия и т.д.
Сборник (ASTM):
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика:
Electronics
Описание
Причина отменыThis specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.

Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

Реферат

This specification establishes the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging. It covers purity (metallic and non-metallic element impurities), grain size, inner quality (internal defect), bonding (backing plate, bonding ratio), configuration (dimension, tolerance, surface roughness), and appearance (surface cleanness). It also includes sampling, traceability, reliability, certification, and packaging requirements.

Область применения

1.1 This specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.

1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.

1.2.1 Purity Requirements: 

1.2.1.1 Metallic element impurities, and

1.2.1.2 Non-metallic element impurities.

1.2.2 Grain Size Requirements—Grain size.

1.2.3 Inner Quality Requirements—Internal defect.

1.2.4 Bonding Requirements: 

1.2.4.1 Backing plate, and

1.2.4.2 Bonding ratio.

1.2.5 Configuration Requirements: 

1.2.5.1 Dimension,

1.2.5.2 Tolerance, and

1.2.5.3 Surface roughness.

1.2.6 Appearance Requirements—Surface cleanness.

1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Ключевые слова:
high-purity copper; sputtering target; TSV metallization;