Formerly under the jurisdiction of Committee F01 on Electronics, this practice was withdrawn in January 2022 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.
Значение и использование4.1 Solid-state electronic devices subjected to stresses from excessive current pulses sometimes fail because a portion of the metallization fuses or vaporizes (suffers burnout). Burnout susceptibility can vary significantly from component to component on a given wafer, regardless of design. This practice provides a procedure for establishing the limits of pulse current overstress within which the metallization of a given device should survive.
4.2 This practice can be used as a destructive test in a lot-sampling program to determine the boundaries of the safe operating region having desired survival probabilities and statistical confidence levels when appropriate sample quantities and statistical analyses are used.
1.1 This practice covers procedures for determining operating regions that are safe from metallization burnout induced by current pulses of less than 1-s duration.
1.2 This practice is based on the application of unipolar rectangular current test pulses. An extrapolation technique is specified for mapping safe operating regions in the pulse-amplitude versus pulse-duration plane. A procedure is provided in Appendix X2 to relate safe operating regions established from rectangular pulse data to safe operating regions for arbitrary pulse shapes.