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ASTM F676-97(2003)
Standard Test Method for Measuring Unsaturated TTL Sink Current (Withdrawn 2009)
3 стр.
Отменен
Электронный (pdf)Печатное издание
84.24 $ (включая НДС 20%)
Разработчик:
Зарубежные/ASTM
Сборник (ASTM):
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика:
Electronics
Описание
Причина отмены

This test method covers the measurement of the unsaturated sink current of transistor-transistor logic (TTL) devices under specified conditions.

This test method is being withdrawn because the committee is not aware of the need to maintain the standard. Reference to the standard will remain available, but at this time, the committee does not wish to actively maintain the standard.

Formerly under the jursidiction of Committee F01 on Electronics and the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects, this test method was withdrawn in December 2009 with no replacement.

Значение и использование

Unsaturated sink current is a special parameter that is closely related to the gain of the output transistor of TTL circuits. This parameter is particularly useful in evaluating neutron degradation in TTL devices because it changes smoothly as the device degrades, and exhibits larger changes at moderate radiation levels than the standard electrical parameters.

Область применения

1.1 This test method covers the measurement of the unsaturated sink current of transistor-transistor logic (TTL) devices under specified conditions.

1.2 Units—The values stated in the International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Ключевые слова:
hardness assurance; neutron degradation; sink current; transistor-transistor logic (TTL)