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BS IEC 60747-9:2007
Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs)
60 стр.
Действует
Печатная копияПечатное издание
359.86 £ (включая НДС 20%)
Разработчик:
Зарубежные/BSI
ICS:
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом, 31.080.30 Transistors / Транзисторы
Ключевые слова:
Testing conditions, Electrical properties and phenomena, Electrical insulation, Leakage currents, Electrical measurement, Time, Temperature, Semiconductor devices, Graphic symbols, Capacitance, Voltage, Electrical resistance, Dissipation factor, Voltage measurement, Circuits, Ratings, Thermal resistance, Response time, Transistors, Electrical safety, Integrated circuits, Current measurement, Symbols, Bipolar transistors, Electric current, Rated current, Rated voltage, Rated power, Electronic equipment and components