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IEC 60747-9:2007 ed2.0
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
117 стр.
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Разработчик:
Зарубежные/IEC
ICS:
31.080.30 Transistors / Транзисторы31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом
Описание
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).The major changes with respect to the previous edition are mainly of an editorial nature.