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IEC 62047-16:2015 ed1.0
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
21 стр.
Действует
Печатная копияЭлектронный (pdf)
65.52 CHF (включая НДС 20%)
Разработчик:
Зарубежные/IEC
ICS:
31.080.99 Other semiconductor devices / Полупроводниковые приборы прочие
Описание
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.