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IEC 63068-1:2019 ed1.0
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
23 стр.
Действует
Печатная копияЭлектронный (pdf)
229.32 CHF (включая НДС 20%)
Разработчик:
Зарубежные/IEC
ICS:
31.080.99 Other semiconductor devices / Полупроводниковые приборы прочие
Описание
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.