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IEC PAS 62165:2000 ed1.0
Guidelines for the measurement of thermal resistance of GaAs FETs
10 стр.
Отменен
Печатная копияЭлектронный (pdf)
65.52 CHF (включая НДС 20%)
Разработчик:
Зарубежные/IEC
ICS:
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом
Описание
For power GaAs FET applications requiring high reliability an accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FET's operating temperature so that more accurate life estimates can be made. FET failure mechanism and failure rates have in general, an exponential dependence on temperature.