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ÖVE/ÖNORM EN 60749-29:2012-03
Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011) (english version)
Действует
Печатная копияПечатное издание
248.65 € (включая НДС 20%)
Разработчик:
Зарубежные/ON
ICS:
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом
Описание
This part of IEC 60749 covers the I-test and the overvoltage latch-up testing of integrated
circuits.
This test is classified as destructive.
The purpose of this test is to establish a method for determining integrated circuit (IC) latchup
characteristics and to define latch-up failure criteria. Latch-up characteristics are used in
determining product reliability and minimizing "no trouble found" (NTF) and "electrical
overstress" (EOS) failures due to latch-up.
This test method is primarily applicable to CMOS devices. Applicability to other technologies
must be established.
The classification of latch-up as a function of temperature is defined in 3.1 and the failure
level criteria are defined in 3.2
Ключевые слова:
Informationstechnologie, Telekommunikation, Elektronik, Halbleiter, Halbleiterbauelement, Bauelement (Elektronik), mechanische Prüfung, mechanisches Prüfverfahren, klimatische Prüfung, klimatisches Prüfverfahren, Schaltung, Beanspruchung, Überspannung, Latch-up, Prüfverfahren, Kenngröße, Fehlerkriterium, Produkt, Zuverlässigkeit, CMOS, Klassifikation, Begriffe, Terminologie, Prüfklasse, Prüfgrad, Prüfeinrichtung, Prüfhilfsmittel, Prüfdurchführung, Beurteilungskriterien