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ASTM F1262M-95(2008)
Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)
5 стр.
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Разработчик:
Зарубежные/ASTM
Сборник (ASTM):
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика:
Electronics
Описание
Значение и использование

Digital logic circuits are used in system applications where they are exposed to pulses of radiation. It is important to know the minimum radiation level at which transient failures can be induced, since this affects system operation.

Область применения

1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (Si)/s.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Ключевые слова:
digital integrated circuits; digital IC's; functional errors; ionizing; pulsed radiation; radiation; transient radiation; upset threshold; Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical conductors (semiconductors); Failure end point--electronic components/devices; 0Functional errors; Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; 0Microelectronic devices; MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation 0exposure--electronic components/devices; Response factors; SSI integrated circuits; Threshold 0detectors; Topological analysis; Transient radiation upset threshold testing; Upset threshold; Voltage; 0Combinational logic; Destructive testing--semiconductors; Digital integrated circuits; Electrical 0conductors (semiconductors); Failure end point--electronic components/devices; Functional errors; 0Integrated circuits; Ionizing radiation; Irradiance/irradiation--semiconductors; Microelectronic devices; 0MSI integrated circuits; Output transient voltage; Pulsed radiation; Radiation exposure--electronic 0components/devices; Response factors; SSI integrated circuits; Threshold detectors; Topological 0analysis; Transient radiation upset threshold testing; Upset threshold; Voltage