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ASTM F1893-98
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
5 стр.
Заменен
Электронный (pdf)Печатное издание
93.60 $ (включая НДС 20%)
Разработчик:
Зарубежные/ASTM
ICS:
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом
Сборник (ASTM):
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика:
Electronics
Описание
Область применения

1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are required because of the high dose-rate levels that are necessary to cause burnout. Two modes of test are possible (1) survival test, and (2) A failure level test.

1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

Ключевые слова:
burnout; failure; high dose-rate; integrated circuits; ionizing radiation; latchup; microcircuits; semiconductor devices; survivability