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BS 9364 N013:1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
12 стр.
Отменен
Печатное изданиеПечатная копия
166.32 £ (включая НДС 20%)
Разработчик:
Зарубежные/BSI
ICS:
31.080.30 Transistors / Транзисторы
Ключевые слова:
Rated power|Design|Epitaxial layers|Quality assurance systems|Electronic equipment and components|Qualification approval|Semiconductor devices|Approval testing|Switching circuits|Temperature|Electric current|Inspection|Marking|Testing conditions|Switches|Quality control|Frequencies|Voltage|Bipolar transistors|Transistors|Statistical quality control|Dimensions|Assessed quality|Electrical properties and phenomena|Ratings|Rated voltage|Rated current|Working range|Capacitance