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BS 9364 N016:1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
12 стр.
Отменен
Печатное изданиеПечатная копия
166.32 £ (включая НДС 20%)
Разработчик:
Зарубежные/BSI
ICS:
31.080.30 Transistors / Транзисторы
Ключевые слова:
Capacitance|Transistors|Electronic equipment and components|Testing conditions|Switching circuits|Electric current|Voltage|Ratings|Quality assurance systems|Rated power|Statistical quality control|Working range|Temperature|Electrical properties and phenomena|Dimensions|Frequencies|Inspection|Epitaxial layers|Bipolar transistors|Rated voltage|Design|Assessed quality|Qualification approval|Marking|Rated current|Quality control|Semiconductor devices|Switches|Approval testing