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IEC 60747-9:2019 ed3.0
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
160 стр.
Действует
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491.40 CHF (включая НДС 20%)
Разработчик:
Зарубежные/IEC
ICS:
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом, 31.080.30 Transistors / Транзисторы
Описание
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.