Fine ceramics (advanced ceramics, advanced technical ceramics) - Mechanical properties of ceramic composites at room temperature - Determination of fatigue properties at constant amplitude (ISO 17140:2014); German version EN ISO 17140:2016— 23 стр.
Advanced technical ceramics - Mechanical properties of ceramic fibres at high temperature in a non-reactive environment - Determination of creep behaviour by the cold end method; German version EN 15365:2010— 20 стр.
Advanced technical ceramics - Test methods for determination of fracture toughness of monolithic ceramics - Part 3: Chevron notched beam (CNB) method; German version EN 14425-3:2010— 15 стр.
Advanced technical ceramics - Ceramic composites - Determination of elastic properties by resonant beam method up to 2000 °C; German version EN 15335:2007— 32 стр.
Testing of ceramic raw and basic materials - Determination of sulfur in powders and granules of non-oxidic ceramic raw and basic materials - Part 2: Inductively coupled plasma optical emission spectrometry (ICP/OES) or ion chromatography after burning in an oxygen flow (ISO 14720-2:2013); German version EN ISO 14720-2:2013— 23 стр.
Testing of ceramic raw and basic materials - Determination of sulfur in powders and granules of non-oxidic ceramic raw and basic materials - Part 1: Infrared measurement methods (ISO 14720-1:2013); German version EN ISO 14720-1:2013— 13 стр.
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)— 28 стр.
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation; German version EN 15979:2011— 23 стр.
Testing of ceramic raw and basic materials - Direct determination of mass fractions of trace impurities in powders, granules and lumps of graphite by optical emission spectroscopy by inductively coupled plasma (ICP OES) and by electrothermal vaporization (ETV) under the action of a halogenated reaction gas (modifiers)— 25 стр.
