Значение и использование

4.1 This guide recommends the water quality required for the electronics and microelectronics industries. High-purity water is required to prevent contamination of products during manufacture, since contamination can lead to an unacceptable, low yield of electronic devices.

4.2 The range of water purity is defined in accordance with the manufacturing process. The types of ultra-pure water are defined with respect to device line width. In all cases, the water-quality recommendations apply at the point of distribution.

4.3 The limits on the impurities are related to current contamination specifications and to available analytical methods (either performed in a suitable clean laboratory or by on-line instrumentation). On-line and off-line methods are used in accordance with current industry practice. Concentration of the sample may be required to measure the impurities at the levels indicated in Table 1.

TABLE 1 Requirements for Water at the Point of Distribution in the Electronics and Semiconductor Industries^A

Parameter

Type E-1

Type E-1.1

Type E-1.2^B

Type E-1.3^B

Type E-2

Type E-3

Type E-4

Linewidth (microns)

1.0–0.5

0.35–0.25

0.18–0.09

0.065–0.032

5.0–1.0

>5.0

—

Resistivity, 25°C (On-line)

18.1

18.2

18.2

18.2

16.5

12

0.5

TOC (μg/L) (on-line for <10 ppb)

5

2

1

1

50

300

1000

On-line dissolved oxygen (μg/L)

25

10

3

10

—

—

—

On-Line Residue after evaporation (μg/L)

1

0.5

0.1

 

—

—

—

On-line particles/L (micron range)

 

 

 

 

 

 

 

>0.05 μm

 

 

 

500

 

 

 

 0.05–0.1

 

1000

200

N/A

—

—

—

 0.1–0.2

1000

350

<100

N/A

—

—

—

  0.2–0.5

500

<100

<10

N/A

—

—

—

 0.5-1.0

200

<50

<5

N/A

—

—

—

 1.0

<100

<20

<1

N/A

—

—

—

SEM particles/L (micron range)

 

 

 

 

 

 

 

 0.1–0.2

1000

700

<250

N/A

—

—

—

 0.2–0.5

500

400

<100

N/A

3000

—

—

 0.5–1

100

50

<30

N/A

—

10 000

—

 10

<50

<30

<10

N/A

—

—

100 000

Bacteria in CFU/Volume

 

 

 

 

 

 

 

 100 mL Sample

5

3

1

N/A

10

50

100

 1 L Sample

 

 

10

1

 

 

 

10 L Sample

 

 

 

1

 

 

 

Silica – total (μg/L)

5

3

1

0.5

10

50

1000

Silica – dissolved (μg/L)

3

1

0.5

0.5

—

—

—

Anions and Ammonium by IC (μg/L)

 

 

 

 

 

 

 

 Ammonium

0.1

0.10

0.05

0.050

—

—

—

 Bromide

0.1

0.05

0.02

0.050

—

—

—

 Chloride

0.1

0.05

0.02

0.050

1

10

1000

 Fluoride

0.1

0.05

0.03

0.050

—

—

—

 Nitrate

0.1

0.05

0.02

0.050

1

5

500

 Nitrite

0.1

0.05

0.02

0.050

—

—

—

 Phosphate

0.1

0.05

0.02

0.050

1

5

500

 Sulfate

0.1

0.05

0.02

0.050

1

5

500

Metals by ICP/MS (μg/L)

 

 

 

 

 

 

 

 Aluminum

0.05

0.02

0.005

0.001

—

—

—

Antimony

 

 

 

0.001

 

 

 

Arsenic

 

 

 

0.001

 

 

 

 Barium

0.05

0.02

0.001

0.001

—

—

—

 Boron^C

0.3

0.1

0.05

0.050

—

—

—

Cadmium

 

 

 

0.010

 

 

 

 Calcium

0.05

0.02

0.002

0.001

—

—

—

 Chromium

0.05

0.02

0.002

0.001

—

—

—

 Copper

0.05

0.02

0.002

0.001

1

2

500

 Iron

0.05

0.02

0.002

0.001

—

—

—

 Lead

0.05

0.02

0.005

0.001

—

—

—

 Lithium

0.05

0.02

0.003

0.001

—

—

—

 Magnesium

0.05

0.02

0.002

0.001

—

—

—

 Manganese

0.05

0.02

0.002

0.010

—

—

—

 Nickel

0.05

0.02

0.002

0.001

1

2

500

 Potassium

0.05

0.02

0.005

0.001

2

5

500

 Sodium

0.05

0.02

0.005

0.001

1

5

1000

 Strontium

0.05

0.02

0.001

 

—

—

—

Tin

 

 

 

0.010

 

 

 

Titanium

 

 

 

0.010

 

 

 

Vanadium

 

 

 

0.010

 

 

 

 Zinc

0.05

0.02

0.002

0.001

1

5

500

Temperature Stability (K)

 

 

 

±1

 

 

 

Temperature Gradient (K/10 min)

 

 

 

<0.1

 

 

 

Dissolved Nitrogen On-line (mg/L)

 

 

 

8-18

 

 

 

Dissolved Nitrogen Stability (mg/L)

 

 

 

±2

 

 

 

^A The user should be advised that analytical data often are instrument dependent and technique dependent. Thus, the numbers in Table 1 are only guidelines. This table will be revised whenever the semiconductor industry develops new linewidths, thereby keeping the guidelines current.^B Values shown in Type E-1.3 are a result of aligning ITRS risk factors of known contaminates to the production processes found in current semiconductor processing for the linewidth of interest and may differ in a few cases to those found in Type E-1.2. Users who wish to use the higher numbers for Type E-1.2 water should feel free to do so.

All values are equal to or less than with the exception of Resistivity.

^C Boron is monitored only as an operational parameter for monitoring the ion-exchange beds. Область применения

1.1 This guide provides recommendations for water quality related to electronics and semiconductor-industry manufacturing. Seven classifications of water are described, including water for line widths as low as 0.032 micron. In all cases, the recommendations are for water at the point of distribution (POD).

1.2 Water is used for washing and rinsing of semiconductor components during manufacture. Water is also used for cleaning and etching operations, making steam for oxidation of silicon surfaces, preparing photomasks, and depositing luminescent materials. Other applications are in the development and fabrication of solid-state devices, thin-film devices, communication lasers, light-emitting diodes, photo-detectors, printed circuits, memory devices, vacuum-tube devices, or electrolytic devices.

1.3 Users needing water qualities different from those described here should consult other water standards, such as Specification D1193 and Guide D5196.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.