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СтандартыASTM

ASTM E1249-00(2005)

Заменен
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 16 стр.
ОписаниеСсылкиВерсии

Ссылочные документы

ASTM E1250-88(2005)
Заменен
Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices — 11 стр.
ASTM E666-09
Заменен
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation — 9 стр.
ASTM E668-10
Заменен
Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices — 19 стр.
ASTM E170-10
Заменен
Standard Terminology Relating to Radiation Measurements and Dosimetry — 9 стр.
ASTM E1249-10
Заменен
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 17 стр.
ASTM E1249-00
Заменен
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 16 стр.

На этот документ ссылаются

ASTM E666-97
Заменен
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation — 9 стр.
ASTM E666-08
Заменен
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation — 9 стр.
ASTM E1249-00
Заменен
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 16 стр.
ASTM E1854-03
Заменен
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts — 16 стр.
ASTM E666-03
Заменен
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation — 9 стр.
ASTM E1854-05
Заменен
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts — 16 стр.
ASTM E1249-10
Заменен
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 17 стр.
ASTM E1854-96
Заменен
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts — 16 стр.
ASTM F1892-04
Заменен
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices — 39 стр.
ASTM F1892-98
Заменен
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices — 35 стр.
ASTM F1467-99
Заменен
Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits — 17 стр.
ASTM E1894-97(2002)
Заменен
Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources — 17 стр.
ASTM E1894-97
Заменен
Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources — 17 стр.
ASTM F1190-99
Заменен
Standard Guide for Neutron Irradiation of Unbiased Electronic Components — 5 стр.
ASTM F1190-93
Заменен
Standard Guide for Neutron Irradiation of Unbiased Electronic Components — 5 стр.
ASTM F996-98
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 6 стр.
ASTM F996-98(2003)
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 7 стр.
ASTM E1250-88(2000)
Заменен
Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices — 10 стр.
ASTM E1250-88(2005)
Заменен
Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices — 11 стр.