Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices— 19 стр.
Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits— 18 стр.
Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits— 18 стр.
Standard Guide for Use of an X-Ray Tester ([approximate]10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits— 17 стр.
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics— 6 стр.
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics— 7 стр.
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics— 7 стр.
