Auger analysis is used to determine the elemental composition of the first few atomic layers, typically 0.5 to 2.0 nm thick, of a specimen surface. In conjunction with inert gas ion sputtering, it is used to determine the sputter depth profile to a depth of a few micrometres.

The specimen is normally a solid conductor, semiconductor, or insulator. For insulators, provisions may be required for control of charge accumulation at the surface (see Guide E 1523). Typical applications include the analysis of thin film deposits or segregated overlayers on metallic or alloy substrates. The specimen topography may vary from a smooth, polished specimen to a rough fracture surface.

Auger analysis of specimens with volatile species that evaporate in the ultra-high vacuum environment of the Auger chamber and substances which are susceptible to electron or X-ray beam damage, such as organic compounds, may require special techniques not covered herein. (See Guide E 983.)

1.1 This practice outlines the necessary steps for the identification of elements in a given Auger spectrum obtained using conventional electron spectrometers. Spectra displayed as either the electron energy distribution (direct spectrum) or the first derivative of the electron energy distribution are considered.

1.2 This practice applies to Auger spectra generated by electron or X-ray bombardment of the specimen surface and can be extended to spectra generated by other methods such as ion bombardment.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.