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ASTM F1032-91

Отменен
Guide for Measuring Time-Dependant Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing Radiation (Withdrawn 1994) — 3 стр.
ОписаниеСсылкиВерсии

Ссылочные документы

ASTM F1032-91
Отменен
Guide for Measuring Time-Dependant Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing Radiation (Withdrawn 1994) — 3 стр.

На этот документ ссылаются

ASTM F1032-91
Отменен
Guide for Measuring Time-Dependant Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing Radiation (Withdrawn 1994) — 3 стр.
ASTM F980-10e1
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices — 7 стр.
ASTM F980M-96
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric] — 5 стр.
ASTM F980-92
Заменен
Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices — 5 стр.
ASTM F980-10
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices — 5 стр.
ASTM F980-16
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices — 7 стр.
ASTM F980M-96(2003)
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric] — 5 стр.
ASTM F980-16(2024)
Действует
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices — 7 стр.