This test method is intended for application in the semiconductor industry for evaluating the purity of materials (for example, sputtering targets, evaporation sources) used in thin film metallization processes. This test method may be useful in additional applications, not envisioned by the responsible technical committee, as agreed upon by the parties concerned.

This test method is intended for use by GDMS analysts in various laboratories for unifying the protocol and parameters for determining trace impurities in pure aluminum. The objective is to improve laboratory to laboratory agreement of analysis data. This test method is also directed to the users of GDMS analyses as an aid to understanding the determination method, and the significance and reliability of reported GDMS data.

For most metallic species the detection limit for routine analysis is on the order of 0.01 weight ppm. With special precautions detection limits to sub-ppb levels are possible.

This test method may be used as a referee method for producers and users of electronic-grade aluminum materials.

1.1 This test method covers measuring the concentrations of trace metallic impurities in high purity aluminum.

1.2 This test method pertains to analysis by magnetic-sector glow discharge mass spectrometer (GDMS).

1.3 The aluminum matrix must be 99.9 weight % (3N-grade) pure, or purer, with respect to metallic impurities. There must be no major alloy constituent, for example, silicon or copper, greater than 1000 weight ppm in concentration.

1.4 This test method does not include all the information needed to complete GDMS analyses. Sophisticated computer-controlled laboratory equipment skillfully used by an experienced operator is required to achieve the required sensitivity. This test method does cover the particular factors (for example, specimen preparation, setting of relative sensitivity factors, determination of sensitivity limits, etc.) known by the responsible technical committee to affect the reliability of high purity aluminum analyses.