1.1 This test method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy. In this test method, the incident radiation is p-polarized and incident on the test specimen at the Brewster angle in order to minimize multiple reflections.

Note 1—In this test method, radiation in which the electric vector is parallel to the plane of incidence is defined as p-polarized radiation.

Note 2—Committee F01 has been advised that some aspects of this test method may be subject to a patent applied for by Toshiba Ceramics Corporation. The Committee takes no position with respect to the applicability or validity of such patents, but it requests users of this test method and other interested parties to supply any information available on non-patented alternatives for use in connection with this test method.

1.2 Since the interstitial oxygen concentration is proportional to the absorption coefficient of the 1107 cm¹ absorption band, the interstitial oxygen content of the wafer can be derived directly using an independently determined calibration factor.

1.3 The test specimen is a single-side polished silicon wafer of the type specified in SEMI Specifications M1. The front surface of the wafer is mirror polished and the back surface may be as-cut, lapped, or etched (see 8.1.1.1).

1.4 This test method is applicable to silicon wafers with resistivity greater than 5 Ωcm at room temperature.

1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.