Formerly under the jurisdiction of Committee F01 on Electronics, this specification was withdrawn in November 2023. This standard is being withdrawn without replacement because Committee F01 was disbanded.

This specification covers high purity titanium sputtering targets for use as raw material in the fabrication of semiconductor electronic thin films. Material covered by this specification comprises Grades 4N, 4N5, and 5N titanium sputtering targets, the grades of which are based on the total metallic impurity content. The target shall be manufactured free of any contaminates such as dirt or oils and with average and maximum grain sizes in conformity with the requirements specified. The target shall be analyzed for trace metallic impurities, carbon, oxygen, sulfur, nitrogen, and hydrogen and shall conform to the grade requirements and the acceptable and minimum detection limits specified.

1.1 This specification covers pure titanium sputtering targets used as a raw material in fabricating semiconductor electronic devices.

1.2 This standard sets purity grade levels, physical attributes, analytical methods, and packaging.

1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.