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ASTM F1725-02

Отменен
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots (Withdrawn 2003) — 3 стр.
Область применения

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.

1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ICS
29.045 Semiconducting materials / Полупроводниковые материалы
Сборник ASTM
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика
Electronics