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ASTM F1893-98(2003)

Заменен
Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices — 5 стр.
Значение и использование

The use of FXR radiation sources for the determination of high dose-rate burnout in semiconductor devices is addressed in this guide. The goal of this guide is to provide a systematic approach to testing for burnout.

The different type of failure modes that are possible are defined and discussed in this guide. Specifically, failure can be defined by a change in device parameters, or by a catastrophic failure of the device.

This guide can be used to determine the survivability of a device, that is, that the device survives a predetermined level; or the guide can be used to determine the survival dose-rate capability of the device. However, since this latter test is destructive, the minimum dose-rate level for failure must be determined statistically.

Область применения

1.1 This guide defines the detailed requirements for testing microcircuits for short pulse high dose-rate ionization-induced failure. Large flash x-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are required because of the high dose-rate levels that are necessary to cause burnout. Two modes of test are possible (1) survival test, and (2) A failure level test.

1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this standard.

ICS
31.080.01 Semiconductor devices in general / Полупроводниковые приборы в целом
Сборник ASTM
10.04 Electronics; Declarable Substances in Materials; 3D Imaging Systems; Additive Manufacturing Technologies / Электроника; Декларируемые вещества в материалах; Системы 3D-визуализации; Аддитивные технологии производства
Тематика
Electronics