Причина отмены This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.

Formerly under the jurisdiction of Committee F01 on Electronics, this guide was withdrawn in January 2020 in accordance with section 10.6.3 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.

Реферат

This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials. This standard sets purity grade levels, analytical methods and impurity content reporting method and format. The grade designation is a measure of total metallic impurity content. It does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance. Analysis for trace metallic impurities and gases shall be performed on samples that represent the finished sputtering target. Carbon, oxygen, and sulfur shall be analysed by fusion and gas extraction/infrared spectroscopy. Nitrogen and hydrogen shall be analysed by fusion and gas extraction.

Область применения

1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.

1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.

1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.