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ASTM
ASTM F980-10e1
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
— 7 стр.
Описание
Ссылки
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Ссылочные документы
ASTM E722-14
Заменен
Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics
— 27 стр.
ASTM F1032-91
Отменен
Guide for Measuring Time-Dependant Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing Radiation (Withdrawn 1994)
— 3 стр.
ASTM E1894-13a
Заменен
Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
— 19 стр.
ASTM E666-14
Заменен
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation
— 9 стр.
ASTM E1854-13
Заменен
Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
— 13 стр.
ASTM E721-16
Заменен
Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
— 12 стр.
ASTM E265-15
Заменен
Standard Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
— 6 стр.
ASTM E720-11
Заменен
Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics
— 12 стр.
ASTM E264-08(2013)
Заменен
Standard Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
— 3 стр.
ASTM E1855-15
Заменен
Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
— 10 стр.
ASTM F980-16
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
— 7 стр.
ASTM F980-10
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
— 5 стр.
На этот документ ссылаются
ASTM F980-10
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
— 5 стр.
ASTM F980-16
Заменен
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
— 7 стр.