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ASTM F996-11(2018)

Отменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–;Voltage Characteristics (Withdrawn 2023) — 7 стр.
ОписаниеСсылкиВерсии

Ссылочные документы

ASTM E1894-24
Действует
Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources — 19 стр.
ASTM E1249-15(2021)
Действует
Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources — 17 стр.
ASTM E668-20
Действует
Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices — 19 стр.
ASTM E666-21
Действует
Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation — 9 стр.
ASTM F996-11(2018)
Отменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–;Voltage Characteristics (Withdrawn 2023) — 7 стр.
ASTM F996-11
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 7 стр.

На этот документ ссылаются

ASTM F1892-12
Заменен
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices — 41 стр.
ASTM F996-98
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 6 стр.
ASTM F996-11
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 7 стр.
ASTM F996-10
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 7 стр.
ASTM F996-98(2003)
Заменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics — 7 стр.
ASTM F996-11(2018)
Отменен
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–;Voltage Characteristics (Withdrawn 2023) — 7 стр.
ASTM F1892-12(2018)
Действует
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices — 41 стр.