BS 3934-5:1997

Действует

Mechanical standardization of semiconductor devices, Recommendations applying to tape automated bonding (TAB) of integrated circuits — 38 стр.

Описание Изменения Ссылки Версии

Ссылочные документы

BS 3934-5:1992

Заменен

Mechanical standardization of semiconductor devices, Recommendations for tape automated bonding (TAB) of integrated circuits — 16 стр.

На этот документ ссылаются

BS QC 750100:1986

Действует

Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Sectional specification — 20 стр.

BS QC 750005:1987

Действует

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes — 16 стр.

BS QC 750112:1988

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz — 20 стр.

BS EN 120006:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: pin-photodiodes for fibre optic applications — 18 стр.

BS QC 750001:1986

Действует

Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes — 12 стр.

BS EN 150011:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated thyristors — 26 стр.

BS EN 150013:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: current regulator and current reference diodes — 20 стр.

BS EN 150010:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient rated thyristors — 28 стр.

BS EN 120005:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications) — 18 стр.

BS EN 120004:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output — 26 стр.

BS EN 120003:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays — 22 стр.

BS EN 120002:1993

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays — 20 стр.

BS CECC 90103:1980

Действует

Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS — 22 стр.

BS CECC 90101:1980

Действует

Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL circuits, series 54, 64, 74, 84 — 42 стр.

BS G 209:1970

Действует

Specification for transformer rectifier units — 8 стр.

BS CECC 50009:1982

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes — 24 стр.

BS CECC 50008:1982

Действует

Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes — 20 стр.

BS 3934-5:1992

Заменен

Mechanical standardization of semiconductor devices, Recommendations for tape automated bonding (TAB) of integrated circuits — 16 стр.

BS 9364 N017:1979

Отменен

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.

BS 9305 N041:1972

Отменен

Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q — 14 стр.

BS 9364 N013:1979

Отменен

Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.

BS 6943:1988

Отменен

Classification of shapes of electronic components for placement on printed wiring boards — 90 стр.

BS 9364 N011:1978

Отменен

Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.

BS 9364 N008 and N010:1978

Отменен

Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.

BS 9305 N044:1974

Отменен

Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level — 16 стр.

BS 9305 N042:1972

Отменен

Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C — 22 стр.

BS 9364 N016:1979

Отменен

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.

BS 9301 N002:1971

Отменен

Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q — 14 стр.

BS 9364 N007 and N009:1978

Отменен

Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.

BS 9450:1975

Заменен

Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test — 104 стр.

BS 9450:1998

Заменен

Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test — 154 стр.

BS 9305 N001:1972

Отменен

Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q — 18 стр.

BS 9364 N012:1978

Отменен

Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.