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BS 9300 C841-849:1971

Отменен
Detail specification for silicon voltage regulator diodes — 12 стр.
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Ссылочные документы

BS 9300 C841-849:1971
Отменен
Detail specification for silicon voltage regulator diodes — 12 стр.

На этот документ ссылаются

BS SP 8:1939
Действует
Specification for turnbuckles (tension rod type) for aircraft purposes — 10 стр.
BS 9300 C405-429:1971
Отменен
Detail specifications for silicon voltage-regulator diodes — 14 стр.
BS 9300 C534:1971
Отменен
Detail specification for silicon coaxial resistive switching diode — 14 стр.
BS 9364 N017:1979
Отменен
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.
BS 9300 C476:1973
Отменен
Detail specification for silicon avalanche rectifier diode — 12 стр.
BS 9300 C780-831:1971
Отменен
Detail specification for silicon voltage regulator diodes — 32 стр.
BS 9300 C377-378:1971
Отменен
Detail specifications for silicon coaxial mixer diodes — 10 стр.
BS 9300 C582-584:1971
Отменен
Detail specifications for reverse blocking triode thyristors — 18 стр.
BS 9300 C599:1971
Отменен
Detail specification for silicon microwave switching diode, rod mounted — 14 стр.
BS 9305 N041:1972
Отменен
Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q — 14 стр.
BS 9300 C199-276:1971
Отменен
Detail specification for silicon voltage-regulator diodes — 16 стр.
BS 9300 C678-721:1971
Отменен
Detail specification for silicon voltage regulator diodes — 39 стр.
BS 9364 N013:1979
Отменен
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.
BS 9364 N011:1978
Отменен
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.
BS 9300 C379-388:1971
Отменен
Detail specifications for silicon stud mounted, power rectifier diodes — 16 стр.
BS 9364 N008 and N010:1978
Отменен
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.
BS 9305 N044:1974
Отменен
Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level — 16 стр.
BS 9305 N042:1972
Отменен
Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C — 22 стр.
BS 9364 N016:1979
Отменен
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.
BS 9300 C667-668:1971
Отменен
Detail specification for silicon avalanche rectifier diodes — 16 стр.
BS 9301 N002:1971
Отменен
Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q — 14 стр.
BS 9300 C776-777:1971
Отменен
Detail specification for germanium coaxial mixer diodes — 12 стр.
BS 9364 N007 and N009:1978
Отменен
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.
BS 9450:1975
Заменен
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test — 104 стр.
BS 9450:1998
Заменен
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test — 154 стр.
BS 9300 C841-849:1971
Отменен
Detail specification for silicon voltage regulator diodes — 12 стр.
BS 9305 N001:1972
Отменен
Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q — 18 стр.
BS 9300 C778:1971
Отменен
Detail specification for a matched pair of germanium coaxial mixer diodes — 6 стр.
BS 9300 C762:1971
Отменен
Detail specification for mixer diodes for use at X-band frequencies — 16 стр.
BS 9364 N012:1978
Отменен
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.
BS 9300 C771-772:1971
Отменен
Detail specification for coaxial mixer diodes — 12 стр.