BS 9364 N017:1979

Отменен

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level — 6 стр.

Описание Изменения Ссылки Версии

Ссылочные документы

BS 9300 C841-849:1971

Отменен

Detail specification for silicon voltage regulator diodes — 12 стр.

BS 9364 N016:1979

Отменен

Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level — 12 стр.

BS 3934-5:1997

Действует

Mechanical standardization of semiconductor devices, Recommendations applying to tape automated bonding (TAB) of integrated circuits — 38 стр.