Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 4: Determination of metallic main components and trace impurities— 28 стр.
Chemical analysis of aluminosilicate refractory products (alternative to the X-ray fluorescence method) - Part 3: Inductively coupled plasma and atomic absorption spectrometry methods (ISO 21587-3:2007); German version EN ISO 21587-3:2007— 28 стр.
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)— 28 стр.
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation; German version EN 15979:2011— 23 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 2: Determination of total boron, soluble boron compounds, HNO<(Index)3>-soluble boron in B<(Index)4>C, H<(Index)2>O<(Index)2> soluble and insoluble fractions in amorphous boron and HF/HNO<(Index)3> insoluble fractions in titanium boride— 52 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 1: General information and sample preparation— 9 стр.
Testing of ceramic raw and basic materials - Direct determination of mass fractions of trace impurities in powders, granules and lumps of graphite by optical emission spectroscopy by inductively coupled plasma (ICP OES) and by electrothermal vaporization (ETV) under the action of a halogenated reaction gas (modifiers)— 25 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 4: Determination of metallic main components and trace impurities— 28 стр.
