Semiconductor devices - Part 6: Thyristors; Section two: Blank detail specification for bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A; Identical with IEC 60747-6-2:1991
Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987
Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors, General and classification, Sensor generals and classification for semiconductor sensors— 14 стр.
Semiconductor devices - Part 3: Signal diodes and regulator diodes; Section two: Blank detail specification for voltage-regulator diodes and voltage reference diodes; Identical with IEC 60747-3-2:1986
Semiconductor devices; integrated circuits; part 20: generic specification for film integrated circuits and hybrid film integrated circuits; identical with IEC 60748-20:1988
Semiconductor devices. Integrated circuits. Hybrid integrated circuits and film structures. Manufacturing line certification, Internal visual inspection and special tests— 100 стр.
Semiconductor devices. Integrated circuits. Hybrid integrated circuits and film structures. Manufacturing line certification. Manufacturers' self-audit checklist and report— 88 стр.
Semiconductor devices. Integrated circuits. Hybrid integrated circuits and film structures. Manufacturing line certification. Procedure for qualification approval— 32 стр.