Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004 + A1:2011); German version EN 60749-23:2004 + A1:2011— 11 стр.
Semiconductor devices - Part 6: Thyristors; Section two: Blank detail specification for bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A; Identical with IEC 60747-6-2:1991
Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987
Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors, General and classification, Sensor generals and classification for semiconductor sensors— 14 стр.
Semiconductor devices - Part 3: Signal diodes and regulator diodes; Section two: Blank detail specification for voltage-regulator diodes and voltage reference diodes; Identical with IEC 60747-3-2:1986
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004); German version EN 60749-23:2004— 11 стр.
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004); German version EN 60749-23:2004— 11 стр.