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IEC
IEC 60747-8:2010 ed3.0
Действует
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
— 155 стр.
Описание
Изменения
Ссылки
Версии
Ссылочные документы
IEC 60747-8-4:2004 ed1.0
Заменен
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
— 121 стр.
IEC 60747-8:2000 ed2.0
Заменен
S emiconductor devices - Part 8: Field-effect transistors
— 135 стр.
IEC 60747-8-3:1995 ed1.0
Заменен
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications
— 37 стр.
IEC 60747-8-2:1993 ed1.0
Заменен
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications
— 35 стр.
На этот документ ссылаются
IEC 60747-8:2000 ed2.0
Заменен
S emiconductor devices - Part 8: Field-effect transistors
— 135 стр.
IEC 60747-8-3:1995 ed1.0
Заменен
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field effect transistors for switching applications
— 37 стр.
IEC 60747-8-4:2004 ed1.0
Заменен
Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
— 121 стр.
IEC 60747-8-2:1993 ed1.0
Заменен
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section two: Blank detail specification for field-effect transistors for case-rated power amplifier applications
— 35 стр.