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ASTM F120-88

Отменен
Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993) — 7 стр.
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Ссылочные документы

ASTM F120-88
Отменен
Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993) — 7 стр.

На этот документ ссылаются

DIN 50438-1:1995-07
Отменен
Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen — 10 стр.
DIN 50438-1:1994-09
Отменен
Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen — 10 стр.
DIN 50438-2:1980-06
Отменен
Testing of semi-conductive inorganic materials; determination of impurity content in silicon by infrared absorption, carbon — 4 стр.
DIN 50438-1:1978-01
Отменен
Testing of semi-conductive inorganic materials; determination of impurity content in silicon by infrared absorption, oxygen — 5 стр.
ASTM F120-88
Отменен
Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993) — 7 стр.