This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials. This standard sets purity grade levels, analytical methods and impurity content reporting method and format. The grade designation is a measure of total metallic impurity content. It does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance. Analysis for trace metallic impurities and gases shall be performed on samples that represent the finished sputtering target. Carbon, oxygen, and sulfur shall be analysed by fusion and gas extraction/infrared spectroscopy. Nitrogen and hydrogen shall be analysed by fusion and gas extraction.

1.1 This guide covers sputtering targets used as thin film source material in fabricating semiconductor electronic devices. It should be used to develop target specifications for specific materials and should be referenced therein.

1.2 This standard sets purity grade levels, analytical methods and impurity content reporting method and format.

1.2.1 The grade designation is a measure of total metallic impurity content. The grade designation does not necessarily indicate suitability for a particular application because factors other than total metallic impurity may influence performance.