Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German version EN 15991:2011— 28 стр.
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)— 28 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 2: Determination of total boron, soluble boron compounds, HNO<(Index)3>-soluble boron in B<(Index)4>C, H<(Index)2>O<(Index)2> soluble and insoluble fractions in amorphous boron and HF/HNO<(Index)3> insoluble fractions in titanium boride— 52 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, metal borides and elemental boron - Part 1: General information and sample preparation— 9 стр.
Testing of ceramic raw and basic materials - Chemical analysis of boron carbide, boron nitride, other metal borides and elemental boron - Part 3: Determination of the non-metallic major and minor constituents total carbon, total oxygen and total nitrogen as well as of free carbon in B<(Index)4>C and of loss on drying of amorphus boron— 43 стр.
Chemical analysis of refractories. General requirements for wet chemical analysis, atomic absorption spectrometry (AAS) and inductively coupled plasma atomic emission spectrometry (ICP-AES) methods— 24 стр.
Chemical analysis of refractory material glass and glazes. Determination of Fe2+ and Fe3+ by the spectral photometric method with 1,10-phenanthroline— 20 стр.
Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)— 30 стр.
Testing of ceramic raw and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation— 26 стр.
Chemical analysis of refractory material glass and glazes - Determination of Fe2+ and Fe3+ by the spectral photometric method with 1,10-phenantroline (ISO 14719:2011)
Chemical analysis of refractories - General requirements for wet chemical analysis, atomic absorption spectrometry (AAS) and inductively coupled plasma atomic emission spectrometry (ICP-AES) methods (ISO 26845:2008)
Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 1: General information and sample preparation (ISO 21068-1:2008)
