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ASTM F1619-95(2000)e1

Отменен
Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003) — 7 стр.
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Ссылочные документы

ASTM F1619-95(2000)e1
Отменен
Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003) — 7 стр.
ASTM F1619-95(2000)
Заменен
Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle — 7 стр.

На этот документ ссылаются

BS EN 50513:2009
Действует
Solar wafers. Data sheet and product information for crystalline silicon wafers for solar cell manufacturing — 36 стр.
ASTM F1619-95(2000)e1
Отменен
Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003) — 7 стр.
ASTM F1619-95(2000)
Заменен
Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle — 7 стр.