17/30352696 DC

Действует

BS IEC 62047-31. Semiconductor devices. Micro-electromechanical devices. Part 31. Four-point bending test method for interfacial adhesion energy of layered MEMS materials — 14 стр.

Описание Изменения Ссылки Версии

Ссылочные документы

IEC 62047-9:2011/COR1:2012 ed1.0

Действует

Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS — 0 стр.

IEC 62047-8:2011 ed1.0

Действует

Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films — 36 стр.

IEC 62047-2:2006 ed1.0

Действует

Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials — 25 стр.

IEC 62047-3:2006 ed1.0

Действует

Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing — 15 стр.

IEC 62047-22:2014 ed1.0

Действует

Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates — 20 стр.