Testing of materials for use in semiconductor technology; determination of interstitial atomic boron and phosphorus content of silicon by infrared absorption spectroscopy— 4 стр.
Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array— 5 стр.
Testing of materials for use in semiconductor technology - Determination of impurity content silicon by infrared absorption - Part 3: Boron and phosphorus— 11 стр.
Testing of materials for use in semiconductor technology - Determination of impurity content silicon by infrared absorption - Part 3: Boron and phosphorus— 11 стр.
