DIN 50439:1982-10

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Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact — 6 стр.

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DIN 50438-1:1995-07

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Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen — 10 стр.

DIN 50438-1:1994-09

Отменен

Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen — 10 стр.