Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide— 9 стр.
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces— 9 стр.
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide— 4 стр.
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide— 4 стр.
