Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array— 5 стр.
Testing of semi-conducting inorganic materials; determination of the conductivity type of silicon or germanium by means of rectification test or hot-probe— 3 стр.
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces— 9 стр.
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation— 10 стр.
Determination of roughnesse parameters R<(Index)a>, R<(Index)z>, R<(Index)max> by means of electrical stylus instruments; conversation of parameter R<(Index)a> to R<(Index)z> and vice versa— 2 стр.
