Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003)— 7 стр.
Testing of semi-conducting inorganic materials; measurement of the electrical resistivity of silicon or germanium single crystals by means of the four-point-probe direct current method with collinear four probe array— 5 стр.
Testing of semi-conducting inorganic materials; determination of the conductivity type of silicon or germanium by means of rectification test or hot-probe— 3 стр.
Testing of semi-conducting inorganic materials; estimation of the crystal perfection of monocrystalline silicon samples on etched {111} surfaces— 7 стр.
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation— 11 стр.
Standard Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage (Withdrawn 2003)— 6 стр.
