Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)— 7 стр.
Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array— 5 стр.
Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact— 6 стр.
Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers— 4 стр.
Test Method for Using Computer-Assisted Infrared Spectrophotometry to Measure the Interstitial Oxygen Content of Silicon Slices Polished on Both Sides (Withdrawn 1993)— 4 стр.
Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide— 6 стр.
Testing of materials for use in semiconductor technology - Determination of impurity content silicon by infrared absorption - Part 3: Boron and phosphorus— 11 стр.
Testing of materials for use in semiconductor technology; determination of interstitial atomic boron and phosphorus content of silicon by infrared absorption spectroscopy— 4 стр.
Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide— 4 стр.
