Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006— 14 стр.
Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012— 20 стр.
Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films (IEC 62047-17:2015); German version EN 62047-17:2015— 28 стр.
Semiconductor devices - Micro-electromechanical devices - Part 13: Bend- and shear- type test methods of measuring adhesive strength for MEMS structures (IEC 62047-13:2012); German version EN 62047-13:2012— 17 стр.
Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013— 21 стр.
Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011— 31 стр.
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods (IEC 62047-16:2015); German version EN 62047-16:2015— 13 стр.
Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014— 16 стр.
Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011); German version EN 62047-7:2011— 30 стр.
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011— 18 стр.
Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013— 15 стр.
Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS (IEC 62047-4:2008); German version EN 62047-4:2010— 22 стр.
Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010— 17 стр.
Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures (IEC 62047-26:2016); German version EN 62047-26:2016— 29 стр.
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011— 26 стр.
Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates (IEC 62047-22:2014); German version EN 62047-22:2014— 11 стр.
