Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide— 4 стр.
Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices— 3 стр.
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide— 9 стр.
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide— 2 стр.
Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide— 2 стр.
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide— 9 стр.
